Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
50 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
9.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 33.90
₪ 3.39 Each (Supplied on a Reel) (ex VAT)
₪ 39.66
₪ 3.966 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
₪ 33.90
₪ 3.39 Each (Supplied on a Reel) (ex VAT)
₪ 39.66
₪ 3.966 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
50 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
9.4 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.38mm
Minimum Operating Temperature
-55 °C
Country of Origin
Malaysia
Product details


