Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 1,071.00
₪ 10.71 Each (Supplied on a Reel) (ex VAT)
₪ 1,253.07
₪ 12.531 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 1,071.00
₪ 10.71 Each (Supplied on a Reel) (ex VAT)
₪ 1,253.07
₪ 12.531 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
Malaysia
Product details


