Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
₪ 7.202
Each (On a Reel of 2000) (ex VAT)
₪ 8.426
Each (On a Reel of 2000) (inc VAT)
2000
₪ 7.202
Each (On a Reel of 2000) (ex VAT)
₪ 8.426
Each (On a Reel of 2000) (inc VAT)
2000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
2000 - 8000 | ₪ 7.202 | ₪ 14,403.52 |
10000+ | ₪ 7.132 | ₪ 14,263.68 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
Malaysia
Product details