Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.8 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 317.25
₪ 6.345 Each (Supplied on a Reel) (ex VAT)
₪ 371.18
₪ 7.424 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
₪ 317.25
₪ 6.345 Each (Supplied on a Reel) (ex VAT)
₪ 371.18
₪ 7.424 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 190 | ₪ 6.345 | ₪ 63.45 |
| 200 - 490 | ₪ 5.58 | ₪ 55.80 |
| 500+ | ₪ 4.65 | ₪ 46.50 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.8 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details


