Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
277 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
5.31mm
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 360.00
₪ 36.00 Each (Supplied in a Bag) (ex VAT)
₪ 421.20
₪ 42.12 Each (Supplied in a Bag) (inc. VAT)
Production pack (Bag)
10
₪ 360.00
₪ 36.00 Each (Supplied in a Bag) (ex VAT)
₪ 421.20
₪ 42.12 Each (Supplied in a Bag) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Bag)
10
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
277 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
5.31mm
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details


