Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 40.60
₪ 40.60 Each (ex VAT)
₪ 47.50
₪ 47.50 Each (inc. VAT)
Standard
1
₪ 40.60
₪ 40.60 Each (ex VAT)
₪ 47.50
₪ 47.50 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 24 | ₪ 40.60 |
25 - 99 | ₪ 36.76 |
100 - 249 | ₪ 30.63 |
250 - 499 | ₪ 28.29 |
500+ | ₪ 25.64 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details