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Vishay N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB IRFBG20PBF

RS Stock No.: 542-9563Brand: VishayManufacturers Part No.: IRFBG20PBFDistrelec Article No.: 30423892
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 23.24

₪ 23.24 Each (ex VAT)

₪ 27.19

₪ 27.19 Each (inc. VAT)

Vishay N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB IRFBG20PBF
Select packaging type

₪ 23.24

₪ 23.24 Each (ex VAT)

₪ 27.19

₪ 27.19 Each (inc. VAT)

Vishay N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB IRFBG20PBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit price
1 - 24₪ 23.24
25 - 99₪ 9.70
100 - 249₪ 8.55
250 - 499₪ 8.07
500+₪ 7.56

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.4 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more