Vishay N-Channel MOSFET, 8.5 A, 650 V, 3-Pin TO-220AB IRFB9N65APBF

RS Stock No.: 541-1938Brand: VishayManufacturers Part No.: IRFB9N65APBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.5 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

930 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.41mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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₪ 6.78

₪ 6.78 Each (ex VAT)

₪ 7.93

₪ 7.93 Each (inc. VAT)

Vishay N-Channel MOSFET, 8.5 A, 650 V, 3-Pin TO-220AB IRFB9N65APBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₪ 6.78
2₪ 13.56
3₪ 20.34
4₪ 27.12
5₪ 33.90
6₪ 40.68
7₪ 47.46
8₪ 54.24
9₪ 61.02
10₪ 67.80
11₪ 74.58
12₪ 81.36
13₪ 88.14
14₪ 94.92
15₪ 101.70

₪ 6.78

₪ 6.78 Each (ex VAT)

₪ 7.93

₪ 7.93 Each (inc. VAT)

Vishay N-Channel MOSFET, 8.5 A, 650 V, 3-Pin TO-220AB IRFB9N65APBF

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₪ 6.78
2₪ 13.56
3₪ 20.34
4₪ 27.12
5₪ 33.90
6₪ 40.68
7₪ 47.46
8₪ 54.24
9₪ 61.02
10₪ 67.80
11₪ 74.58
12₪ 81.36
13₪ 88.14
14₪ 94.92
15₪ 101.70

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.5 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

930 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.41mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

48 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.01mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in