Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 70.72
₪ 14.145 Each (In a Pack of 5) (ex VAT)
₪ 82.74
₪ 16.55 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 70.72
₪ 14.145 Each (In a Pack of 5) (ex VAT)
₪ 82.74
₪ 16.55 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₪ 14.145 | ₪ 70.72 |
| 25 - 95 | ₪ 11.115 | ₪ 55.58 |
| 100 - 245 | ₪ 8.625 | ₪ 43.12 |
| 250 - 495 | ₪ 8.115 | ₪ 40.58 |
| 500+ | ₪ 7.62 | ₪ 38.10 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
34 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


