Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 181.50
₪ 18.15 Each (In a Pack of 10) (ex VAT)
₪ 212.36
₪ 21.236 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 181.50
₪ 18.15 Each (In a Pack of 10) (ex VAT)
₪ 212.36
₪ 21.236 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | ₪ 18.15 | ₪ 181.50 |
| 100 - 190 | ₪ 12.18 | ₪ 121.80 |
| 200 - 390 | ₪ 11.79 | ₪ 117.90 |
| 400 - 790 | ₪ 11.385 | ₪ 113.85 |
| 800+ | ₪ 9.18 | ₪ 91.80 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


