Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 498.00
₪ 9.96 Each (In a Tube of 50) (ex VAT)
₪ 582.66
₪ 11.653 Each (In a Tube of 50) (inc. VAT)
50
₪ 498.00
₪ 9.96 Each (In a Tube of 50) (ex VAT)
₪ 582.66
₪ 11.653 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | ₪ 9.96 | ₪ 498.00 |
| 250 - 950 | ₪ 7.815 | ₪ 390.75 |
| 1000 - 2450 | ₪ 7.545 | ₪ 377.25 |
| 2500+ | ₪ 7.275 | ₪ 363.75 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


