P-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB Vishay IRF9530PBF
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
₪ 9.285
Each (In a Tube of 50) (ex VAT)
₪ 10.864
Each (In a Tube of 50) (inc. VAT)
50
₪ 9.285
Each (In a Tube of 50) (ex VAT)
₪ 10.864
Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | ₪ 9.285 | ₪ 464.27 |
| 250 - 950 | ₪ 7.286 | ₪ 364.28 |
| 1000 - 2450 | ₪ 7.034 | ₪ 351.70 |
| 2500+ | ₪ 6.782 | ₪ 339.11 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products