Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 586.50
₪ 11.73 Each (In a Tube of 50) (ex VAT)
₪ 686.20
₪ 13.724 Each (In a Tube of 50) (inc. VAT)
50
₪ 586.50
₪ 11.73 Each (In a Tube of 50) (ex VAT)
₪ 686.20
₪ 13.724 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | ₪ 11.73 | ₪ 586.50 |
250 - 450 | ₪ 11.31 | ₪ 565.50 |
500 - 950 | ₪ 10.92 | ₪ 546.00 |
1000 - 2450 | ₪ 10.515 | ₪ 525.75 |
2500+ | ₪ 10.155 | ₪ 507.75 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details