Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
₪ 75.82
₪ 15.165 Each (In a Pack of 5) (ex VAT)
₪ 88.71
₪ 17.743 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 75.82
₪ 15.165 Each (In a Pack of 5) (ex VAT)
₪ 88.71
₪ 17.743 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | ₪ 15.165 | ₪ 75.82 |
| 50 - 95 | ₪ 12.78 | ₪ 63.90 |
| 100 - 245 | ₪ 12.33 | ₪ 61.65 |
| 250 - 495 | ₪ 11.91 | ₪ 59.55 |
| 500+ | ₪ 11.49 | ₪ 57.45 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
77 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


