Vishay Single 1 Type N-Channel Power MOSFET, 14 A, 100 V, 3-Pin TO-263 IRF530SPBF

RS Stock No.: 180-8299Brand: VishayManufacturers Part No.: IRF530SPBF
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Technical documents

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.16Ω

Maximum Power Dissipation Pd

88W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Width

10.67 mm

Height

4.83mm

Length

9.65mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

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View all in MOSFETs

Stock information temporarily unavailable.

₪ 575.25

₪ 11.505 Each (In a Tube of 50) (ex VAT)

₪ 673.04

₪ 13.461 Each (In a Tube of 50) (inc. VAT)

Vishay Single 1 Type N-Channel Power MOSFET, 14 A, 100 V, 3-Pin TO-263 IRF530SPBF

₪ 575.25

₪ 11.505 Each (In a Tube of 50) (ex VAT)

₪ 673.04

₪ 13.461 Each (In a Tube of 50) (inc. VAT)

Vishay Single 1 Type N-Channel Power MOSFET, 14 A, 100 V, 3-Pin TO-263 IRF530SPBF

Stock information temporarily unavailable.

quantityUnit pricePer Tube
50 - 50₪ 11.505₪ 575.25
100 - 450₪ 9.15₪ 457.50
500 - 950₪ 8.055₪ 402.75
1000 - 1950₪ 6.78₪ 339.00
2000+₪ 6.435₪ 321.75

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.16Ω

Maximum Power Dissipation Pd

88W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

2.5V

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Width

10.67 mm

Height

4.83mm

Length

9.65mm

Standards/Approvals

IEC 61249-2-21, RoHS 2002/95/EC

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more