Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF

RS Stock No.: 543-1645Brand: VishayManufacturers Part No.: IRF510SPBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRF510S 5.6A 100V
P.O.A.Each (In a Pack of 5) (ex VAT)

₪ 16.42

₪ 3.285 Each (In a Pack of 5) (ex VAT)

₪ 19.21

₪ 3.843 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF
Select packaging type

₪ 16.42

₪ 3.285 Each (In a Pack of 5) (ex VAT)

₪ 19.21

₪ 3.843 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRF510S 5.6A 100V
P.O.A.Each (In a Pack of 5) (ex VAT)

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

4.83mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
N-channel MOSFET,IRF510S 5.6A 100V
P.O.A.Each (In a Pack of 5) (ex VAT)