Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3

RS Stock No.: 178-3726Brand: Vishay SiliconixManufacturers Part No.: SQS944ENW-T1_GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

₪ 13,635.00

₪ 4.545 Each (On a Reel of 3000) (ex VAT)

₪ 15,952.95

₪ 5.318 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3

3000

Available in multiples of 3000
3000₪ 13,635.00
6000₪ 27,270.00
9000₪ 40,905.00
12000₪ 54,540.00
15000₪ 68,175.00
18000₪ 81,810.00
21000₪ 95,445.00
24000₪ 109,080.00
27000₪ 122,715.00
30000₪ 136,350.00
33000₪ 149,985.00
36000₪ 163,620.00
39000₪ 177,255.00
42000₪ 190,890.00
45000₪ 204,525.00

₪ 13,635.00

₪ 4.545 Each (On a Reel of 3000) (ex VAT)

₪ 15,952.95

₪ 5.318 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin PowerPAK 1212-8 SQS944ENW-T1_GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 13,635.00
6000₪ 27,270.00
9000₪ 40,905.00
12000₪ 54,540.00
15000₪ 68,175.00
18000₪ 81,810.00
21000₪ 95,445.00
24000₪ 109,080.00
27000₪ 122,715.00
30000₪ 136,350.00
33000₪ 149,985.00
36000₪ 163,620.00
39000₪ 177,255.00
42000₪ 190,890.00
45000₪ 204,525.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

27.8 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

11.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more