Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 7-Pin D2PAK SQM40022EM_GE3

RS Stock No.: 178-3948Brand: Vishay SiliconixManufacturers Part No.: SQM40022EM_GE3
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Country of Origin

Taiwan, Province Of China

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₪ 142.35

₪ 14.235 Each (In a Pack of 10) (ex VAT)

₪ 166.55

₪ 16.655 Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 7-Pin D2PAK SQM40022EM_GE3
Select packaging type

₪ 142.35

₪ 14.235 Each (In a Pack of 10) (ex VAT)

₪ 166.55

₪ 16.655 Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 150 A, 40 V, 7-Pin D2PAK SQM40022EM_GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
10 - 40₪ 14.235₪ 142.35
50 - 90₪ 12.735₪ 127.35
100 - 490₪ 11.28₪ 112.80
500+₪ 10.14₪ 101.40

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more