Vishay Siliconix TrenchFET N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK SQM40016EM_GE3

RS Stock No.: 178-3926PBrand: Vishay SiliconixManufacturers Part No.: SQM40016EM_GE3
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

163 nC @ 10 V

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Country of Origin

Taiwan, Province Of China

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₪ 850.50

₪ 17.01 Each (Supplied on a Reel) (ex VAT)

₪ 995.08

₪ 19.902 Each (Supplied on a Reel) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK SQM40016EM_GE3
Select packaging type

₪ 850.50

₪ 17.01 Each (Supplied on a Reel) (ex VAT)

₪ 995.08

₪ 19.902 Each (Supplied on a Reel) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK SQM40016EM_GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Reel
50 - 95₪ 17.01₪ 85.05
100 - 495₪ 15.24₪ 76.20
500+₪ 13.41₪ 67.05

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

163 nC @ 10 V

Height

11.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Country of Origin

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more