Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

RS Stock No.: 178-3722Brand: Vishay SiliconixManufacturers Part No.: SQJA76EP-T1_GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

₪ 20,115.00

₪ 6.705 Each (On a Reel of 3000) (ex VAT)

₪ 23,534.55

₪ 7.845 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

3000

Available in multiples of 3000
3000₪ 20,115.00
6000₪ 40,230.00
9000₪ 60,345.00
12000₪ 80,460.00
15000₪ 100,575.00
18000₪ 120,690.00
21000₪ 140,805.00
24000₪ 160,920.00
27000₪ 181,035.00
30000₪ 201,150.00
33000₪ 221,265.00
36000₪ 241,380.00
39000₪ 261,495.00
42000₪ 281,610.00
45000₪ 301,725.00

₪ 20,115.00

₪ 6.705 Each (On a Reel of 3000) (ex VAT)

₪ 23,534.55

₪ 7.845 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 20,115.00
6000₪ 40,230.00
9000₪ 60,345.00
12000₪ 80,460.00
15000₪ 100,575.00
18000₪ 120,690.00
21000₪ 140,805.00
24000₪ 160,920.00
27000₪ 181,035.00
30000₪ 201,150.00
33000₪ 221,265.00
36000₪ 241,380.00
39000₪ 261,495.00
42000₪ 281,610.00
45000₪ 301,725.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more