Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3

RS Stock No.: 178-3877PBrand: Vishay SiliconixManufacturers Part No.: SQ2364EES-T1_GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

₪ 348.00

₪ 3.48 Each (Supplied on a Reel) (ex VAT)

₪ 407.16

₪ 4.072 Each (Supplied on a Reel) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 25
100₪ 348.00
125₪ 435.00
150₪ 522.00
175₪ 609.00
200₪ 696.00
225₪ 783.00
250₪ 870.00
275₪ 957.00
300₪ 1,044.00
325₪ 1,131.00
350₪ 1,218.00
375₪ 1,305.00
400₪ 1,392.00
425₪ 1,479.00
450₪ 1,566.00

₪ 348.00

₪ 3.48 Each (Supplied on a Reel) (ex VAT)

₪ 407.16

₪ 4.072 Each (Supplied on a Reel) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 25
100₪ 348.00
125₪ 435.00
150₪ 522.00
175₪ 609.00
200₪ 696.00
225₪ 783.00
250₪ 870.00
275₪ 957.00
300₪ 1,044.00
325₪ 1,131.00
350₪ 1,218.00
375₪ 1,305.00
400₪ 1,392.00
425₪ 1,479.00
450₪ 1,566.00

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
100 - 475₪ 3.48₪ 87.00
500 - 975₪ 2.955₪ 73.88
1000+₪ 2.535₪ 63.38

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more