Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3

RS Stock No.: 178-3877Brand: Vishay SiliconixManufacturers Part No.: SQ2364EES-T1_GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Width

1.4mm

Automotive Standard

AEC-Q101

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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₪ 124.12

₪ 4.965 Each (In a Pack of 25) (ex VAT)

₪ 145.22

₪ 5.809 Each (In a Pack of 25) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25₪ 124.12
50₪ 248.25
75₪ 372.38
100₪ 360.00
125₪ 450.00
150₪ 540.00
175₪ 630.00
200₪ 720.00
225₪ 810.00
250₪ 900.00
275₪ 990.00
300₪ 1,080.00
325₪ 1,170.00
350₪ 1,260.00
375₪ 1,350.00

₪ 124.12

₪ 4.965 Each (In a Pack of 25) (ex VAT)

₪ 145.22

₪ 5.809 Each (In a Pack of 25) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25₪ 124.12
50₪ 248.25
75₪ 372.38
100₪ 360.00
125₪ 450.00
150₪ 540.00
175₪ 630.00
200₪ 720.00
225₪ 810.00
250₪ 900.00
275₪ 990.00
300₪ 1,080.00
325₪ 1,170.00
350₪ 1,260.00
375₪ 1,350.00

Stock information temporarily unavailable.

quantityUnit pricePer Pack
25 - 75₪ 4.965₪ 124.12
100 - 475₪ 3.60₪ 90.00
500 - 975₪ 3.075₪ 76.88
1000+₪ 2.655₪ 66.38

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Transistor Material

Si

Width

1.4mm

Automotive Standard

AEC-Q101

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more