Vishay Siliconix N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3

RS Stock No.: 178-3708Brand: Vishay SiliconixManufacturers Part No.: SQ2364EES-T1_GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

₪ 7,605.00

₪ 2.535 Each (On a Reel of 3000) (ex VAT)

₪ 8,897.85

₪ 2.966 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3

3000

Available in multiples of 3000
3000₪ 7,605.00
6000₪ 15,210.00
9000₪ 22,815.00
12000₪ 30,420.00
15000₪ 38,025.00
18000₪ 45,630.00
21000₪ 53,235.00
24000₪ 60,840.00
27000₪ 68,445.00
30000₪ 76,050.00
33000₪ 83,655.00
36000₪ 91,260.00
39000₪ 98,865.00
42000₪ 106,470.00
45000₪ 114,075.00

₪ 7,605.00

₪ 2.535 Each (On a Reel of 3000) (ex VAT)

₪ 8,897.85

₪ 2.966 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SQ2364EES-T1_GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 7,605.00
6000₪ 15,210.00
9000₪ 22,815.00
12000₪ 30,420.00
15000₪ 38,025.00
18000₪ 45,630.00
21000₪ 53,235.00
24000₪ 60,840.00
27000₪ 68,445.00
30000₪ 76,050.00
33000₪ 83,655.00
36000₪ 91,260.00
39000₪ 98,865.00
42000₪ 106,470.00
45000₪ 114,075.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

1.02mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more