Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3

RS Stock No.: 178-3703Brand: Vishay SiliconixManufacturers Part No.: SiZ350DT-T1-GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

16.7 W

Maximum Gate Source Voltage

-12 V, +16 V

Width

3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Height

0.75mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

₪ 5.062

Each (On a Reel of 3000) (ex VAT)

₪ 5.923

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3

3000

Available in multiples of 3000
3000₪ 15,186.62
6000₪ 30,373.25
9000₪ 45,559.87
12000₪ 60,746.50
15000₪ 75,933.12
18000₪ 91,119.74
21000₪ 106,306.37
24000₪ 121,492.99
27000₪ 136,679.62
30000₪ 151,866.24
33000₪ 167,052.86
36000₪ 182,239.49
39000₪ 197,426.11
42000₪ 212,612.74
45000₪ 227,799.36

₪ 5.062

Each (On a Reel of 3000) (ex VAT)

₪ 5.923

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 Vishay Siliconix SiZ350DT-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 15,186.62
6000₪ 30,373.25
9000₪ 45,559.87
12000₪ 60,746.50
15000₪ 75,933.12
18000₪ 91,119.74
21000₪ 106,306.37
24000₪ 121,492.99
27000₪ 136,679.62
30000₪ 151,866.24
33000₪ 167,052.86
36000₪ 182,239.49
39000₪ 197,426.11
42000₪ 212,612.74
45000₪ 227,799.36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

16.7 W

Maximum Gate Source Voltage

-12 V, +16 V

Width

3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Height

0.75mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more