Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3

RS Stock No.: 178-3701Brand: Vishay SiliconixManufacturers Part No.: SiSS12DN-T1-GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

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Stock information temporarily unavailable.

₪ 16,830.00

₪ 5.61 Each (On a Reel of 3000) (ex VAT)

₪ 19,691.10

₪ 6.564 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3

3000

Available in multiples of 3000
3000₪ 16,830.00
6000₪ 33,660.00
9000₪ 50,490.00
12000₪ 67,320.00
15000₪ 84,150.00
18000₪ 100,980.00
21000₪ 117,810.00
24000₪ 134,640.00
27000₪ 151,470.00
30000₪ 168,300.00
33000₪ 185,130.00
36000₪ 201,960.00
39000₪ 218,790.00
42000₪ 235,620.00
45000₪ 252,450.00

₪ 16,830.00

₪ 5.61 Each (On a Reel of 3000) (ex VAT)

₪ 19,691.10

₪ 6.564 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK 1212-8 SiSS12DN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 16,830.00
6000₪ 33,660.00
9000₪ 50,490.00
12000₪ 67,320.00
15000₪ 84,150.00
18000₪ 100,980.00
21000₪ 117,810.00
24000₪ 134,640.00
27000₪ 151,470.00
30000₪ 168,300.00
33000₪ 185,130.00
36000₪ 201,960.00
39000₪ 218,790.00
42000₪ 235,620.00
45000₪ 252,450.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

1

Width

3.15mm

Length

3.15mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more