Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China
₪ 76.65
₪ 7.665 Each (In a Pack of 10) (ex VAT)
₪ 89.68
₪ 8.968 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 76.65
₪ 7.665 Each (In a Pack of 10) (ex VAT)
₪ 89.68
₪ 8.968 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | ₪ 7.665 | ₪ 76.65 |
| 50 - 90 | ₪ 7.035 | ₪ 70.35 |
| 100 - 490 | ₪ 6.765 | ₪ 67.65 |
| 500 - 990 | ₪ 6.465 | ₪ 64.65 |
| 1000+ | ₪ 5.775 | ₪ 57.75 |
Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China


