Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3

RS Stock No.: 178-3687Brand: Vishay SiliconixManufacturers Part No.: SiR188DP-T1-RE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

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Stock information temporarily unavailable.

₪ 20,115.00

₪ 6.705 Each (On a Reel of 3000) (ex VAT)

₪ 23,534.55

₪ 7.845 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3

3000

Available in multiples of 3000
3000₪ 20,115.00
6000₪ 40,230.00
9000₪ 60,345.00
12000₪ 80,460.00
15000₪ 100,575.00
18000₪ 120,690.00
21000₪ 140,805.00
24000₪ 160,920.00
27000₪ 181,035.00
30000₪ 201,150.00
33000₪ 221,265.00
36000₪ 241,380.00
39000₪ 261,495.00
42000₪ 281,610.00
45000₪ 301,725.00

₪ 20,115.00

₪ 6.705 Each (On a Reel of 3000) (ex VAT)

₪ 23,534.55

₪ 7.845 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 20,115.00
6000₪ 40,230.00
9000₪ 60,345.00
12000₪ 80,460.00
15000₪ 100,575.00
18000₪ 120,690.00
21000₪ 140,805.00
24000₪ 160,920.00
27000₪ 181,035.00
30000₪ 201,150.00
33000₪ 221,265.00
36000₪ 241,380.00
39000₪ 261,495.00
42000₪ 281,610.00
45000₪ 301,725.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more