Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3

RS Stock No.: 178-3670Brand: Vishay SiliconixManufacturers Part No.: SiDR392DP-T1-GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V, +6 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

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Stock information temporarily unavailable.

₪ 41,220.00

₪ 13.74 Each (On a Reel of 3000) (ex VAT)

₪ 48,227.40

₪ 16.076 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3

3000

Available in multiples of 3000
3000₪ 41,220.00
6000₪ 82,440.00
9000₪ 123,660.00
12000₪ 164,880.00
15000₪ 206,100.00
18000₪ 247,320.00
21000₪ 288,540.00
24000₪ 329,760.00
27000₪ 370,980.00
30000₪ 412,200.00
33000₪ 453,420.00
36000₪ 494,640.00
39000₪ 535,860.00
42000₪ 577,080.00
45000₪ 618,300.00

₪ 41,220.00

₪ 13.74 Each (On a Reel of 3000) (ex VAT)

₪ 48,227.40

₪ 16.076 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8DC SiDR392DP-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 41,220.00
6000₪ 82,440.00
9000₪ 123,660.00
12000₪ 164,880.00
15000₪ 206,100.00
18000₪ 247,320.00
21000₪ 288,540.00
24000₪ 329,760.00
27000₪ 370,980.00
30000₪ 412,200.00
33000₪ 453,420.00
36000₪ 494,640.00
39000₪ 535,860.00
42000₪ 577,080.00
45000₪ 618,300.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

900 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V, +6 V

Number of Elements per Chip

1

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

125 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more