Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

RS Stock No.: 133-2811Brand: ToshibaManufacturers Part No.: TPN11003NL,LQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.1mm

Height

0.85mm

Forward Diode Voltage

1.2V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₪ 52.20

₪ 2.61 Each (In a Pack of 20) (ex VAT)

₪ 61.07

₪ 3.054 Each (In a Pack of 20) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

20

Available in multiples of 20
20₪ 52.20
40₪ 104.40
60₪ 156.60
80₪ 208.80
100₪ 240.00
120₪ 288.00
140₪ 336.00
160₪ 384.00
180₪ 432.00
200₪ 453.00
220₪ 498.30
240₪ 543.60
260₪ 588.90
280₪ 634.20
300₪ 679.50

₪ 52.20

₪ 2.61 Each (In a Pack of 20) (ex VAT)

₪ 61.07

₪ 3.054 Each (In a Pack of 20) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 31 A, 30 V, 8-Pin TSON TPN11003NL,LQ(S

Stock information temporarily unavailable.

20

Available in multiples of 20
20₪ 52.20
40₪ 104.40
60₪ 156.60
80₪ 208.80
100₪ 240.00
120₪ 288.00
140₪ 336.00
160₪ 384.00
180₪ 432.00
200₪ 453.00
220₪ 498.30
240₪ 543.60
260₪ 588.90
280₪ 634.20
300₪ 679.50

Stock information temporarily unavailable.

quantityUnit pricePer Pack
20 - 80₪ 2.61₪ 52.20
100 - 180₪ 2.40₪ 48.00
200 - 980₪ 2.265₪ 45.30
1000 - 1980₪ 2.205₪ 44.10
2000+₪ 2.175₪ 43.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.1mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.1mm

Height

0.85mm

Forward Diode Voltage

1.2V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more