Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm
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₪ 13.578
Each (On a Reel of 5000) (ex VAT)
₪ 15.886
Each (On a Reel of 5000) (inc VAT)
5000
₪ 13.578
Each (On a Reel of 5000) (ex VAT)
₪ 15.886
Each (On a Reel of 5000) (inc VAT)
5000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5000 - 5000 | ₪ 13.578 | ₪ 67,892.32 |
10000+ | ₪ 13.453 | ₪ 67,263.04 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Height
0.95mm