N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S

RS Stock No.: 133-2810Brand: ToshibaManufacturers Part No.: TPH8R903NL,LQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Height

0.95mm

Forward Diode Voltage

1.2V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₪ 66.30

₪ 3.315 Each (In a Pack of 20) (ex VAT)

₪ 77.57

₪ 3.879 Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S

20

Available in multiples of 20
20₪ 66.30
40₪ 132.60
60₪ 198.90
80₪ 265.20
100₪ 310.50
120₪ 372.60
140₪ 434.70
160₪ 496.80
180₪ 558.90
200₪ 612.00
220₪ 673.20
240₪ 734.40
260₪ 795.60
280₪ 856.80
300₪ 918.00

₪ 66.30

₪ 3.315 Each (In a Pack of 20) (ex VAT)

₪ 77.57

₪ 3.879 Each (In a Pack of 20) (inc. VAT)

N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S
Stock information temporarily unavailable.

20

Available in multiples of 20
20₪ 66.30
40₪ 132.60
60₪ 198.90
80₪ 265.20
100₪ 310.50
120₪ 372.60
140₪ 434.70
160₪ 496.80
180₪ 558.90
200₪ 612.00
220₪ 673.20
240₪ 734.40
260₪ 795.60
280₪ 856.80
300₪ 918.00

Buy in bulk

quantityUnit pricePer Pack
20 - 80₪ 3.315₪ 66.30
100 - 180₪ 3.105₪ 62.10
200 - 980₪ 3.06₪ 61.20
1000 - 1980₪ 2.985₪ 59.70
2000+₪ 2.955₪ 59.10

Ideate. Create. Collaborate

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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Height

0.95mm

Forward Diode Voltage

1.2V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more