Toshiba U-MOSVIII-H N-Channel MOSFET, 32 A, 30 V, 8-Pin SOP TPH11003NL,LQ(S

RS Stock No.: 133-2808Brand: ToshibaManufacturers Part No.: TPH11003NL,LQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

21 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₪ 42.30

₪ 4.23 Each (In a Pack of 10) (ex VAT)

₪ 49.49

₪ 4.949 Each (In a Pack of 10) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 32 A, 30 V, 8-Pin SOP TPH11003NL,LQ(S

10

Available in multiples of 10
10₪ 42.30
20₪ 84.60
30₪ 126.90
40₪ 169.20
50₪ 194.25
60₪ 233.10
70₪ 271.95
80₪ 310.80
90₪ 349.65
100₪ 364.50
110₪ 400.95
120₪ 437.40
130₪ 473.85
140₪ 510.30
150₪ 546.75

₪ 42.30

₪ 4.23 Each (In a Pack of 10) (ex VAT)

₪ 49.49

₪ 4.949 Each (In a Pack of 10) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 32 A, 30 V, 8-Pin SOP TPH11003NL,LQ(S

Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 42.30
20₪ 84.60
30₪ 126.90
40₪ 169.20
50₪ 194.25
60₪ 233.10
70₪ 271.95
80₪ 310.80
90₪ 349.65
100₪ 364.50
110₪ 400.95
120₪ 437.40
130₪ 473.85
140₪ 510.30
150₪ 546.75

Stock information temporarily unavailable.

quantityUnit pricePer Pack
10 - 40₪ 4.23₪ 42.30
50 - 90₪ 3.885₪ 38.85
100 - 490₪ 3.645₪ 36.45
500 - 990₪ 3.555₪ 35.55
1000+₪ 3.54₪ 35.40

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

21 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more