N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

RS Stock No.: 133-2801Brand: ToshibaManufacturers Part No.: TK7P65W,RQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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₪ 61.65

₪ 6.165 Each (In a Pack of 10) (ex VAT)

₪ 72.13

₪ 7.213 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S

10

Available in multiples of 10
10₪ 61.65
20₪ 123.30
30₪ 184.95
40₪ 246.60
50₪ 280.50
60₪ 336.60
70₪ 392.70
80₪ 448.80
90₪ 504.90
100₪ 549.00
110₪ 603.90
120₪ 658.80
130₪ 713.70
140₪ 768.60
150₪ 823.50

₪ 61.65

₪ 6.165 Each (In a Pack of 10) (ex VAT)

₪ 72.13

₪ 7.213 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 61.65
20₪ 123.30
30₪ 184.95
40₪ 246.60
50₪ 280.50
60₪ 336.60
70₪ 392.70
80₪ 448.80
90₪ 504.90
100₪ 549.00
110₪ 603.90
120₪ 658.80
130₪ 713.70
140₪ 768.60
150₪ 823.50

Buy in bulk

quantityUnit pricePer Pack
10 - 40₪ 6.165₪ 61.65
50 - 90₪ 5.61₪ 56.10
100 - 490₪ 5.49₪ 54.90
500 - 990₪ 5.355₪ 53.55
1000+₪ 5.31₪ 53.10

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more