N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

RS Stock No.: 133-2800Brand: ToshibaManufacturers Part No.: TK6P65W,RQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

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₪ 52.05

₪ 5.205 Each (In a Pack of 10) (ex VAT)

₪ 60.90

₪ 6.09 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S

10

Available in multiples of 10
10₪ 52.05
20₪ 104.10
30₪ 156.15
40₪ 208.20
50₪ 237.00
60₪ 284.40
70₪ 331.80
80₪ 379.20
90₪ 426.60
100₪ 466.50
110₪ 513.15
120₪ 559.80
130₪ 606.45
140₪ 653.10
150₪ 699.75

₪ 52.05

₪ 5.205 Each (In a Pack of 10) (ex VAT)

₪ 60.90

₪ 6.09 Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 52.05
20₪ 104.10
30₪ 156.15
40₪ 208.20
50₪ 237.00
60₪ 284.40
70₪ 331.80
80₪ 379.20
90₪ 426.60
100₪ 466.50
110₪ 513.15
120₪ 559.80
130₪ 606.45
140₪ 653.10
150₪ 699.75

Buy in bulk

quantityUnit pricePer Pack
10 - 40₪ 5.205₪ 52.05
50 - 90₪ 4.74₪ 47.40
100 - 490₪ 4.665₪ 46.65
500 - 990₪ 4.545₪ 45.45
1000+₪ 4.485₪ 44.85

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Height

2.3mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more