Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
61.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
205 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
₪ 98.80
Each (ex VAT)
₪ 115.60
Each (inc. VAT)
1
₪ 98.80
Each (ex VAT)
₪ 115.60
Each (inc. VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | ₪ 98.80 |
5 - 9 | ₪ 90.53 |
10+ | ₪ 84.11 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
61.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
400 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
205 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Product details