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Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S

RS Stock No.: 827-6249Brand: ToshibaManufacturers Part No.: TK58A06N1,S4X(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₪ 26.10

₪ 4.35 Each (In a Pack of 6) (ex VAT)

₪ 30.54

₪ 5.09 Each (In a Pack of 6) (inc. VAT)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 6.

Production -

Available in multiples of 6.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

6

Available in multiples of 6
6₪ 26.10
12₪ 52.20
18₪ 78.30
24₪ 104.40
30₪ 130.50
36₪ 156.60
42₪ 182.70
48₪ 208.80
54₪ 234.90
60₪ 261.00
66₪ 287.10
72₪ 313.20
78₪ 339.30
84₪ 365.40
90₪ 391.50

₪ 26.10

₪ 4.35 Each (In a Pack of 6) (ex VAT)

₪ 30.54

₪ 5.09 Each (In a Pack of 6) (inc. VAT)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 6.

Production -

Available in multiples of 6.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

6

Available in multiples of 6
6₪ 26.10
12₪ 52.20
18₪ 78.30
24₪ 104.40
30₪ 130.50
36₪ 156.60
42₪ 182.70
48₪ 208.80
54₪ 234.90
60₪ 261.00
66₪ 287.10
72₪ 313.20
78₪ 339.30
84₪ 365.40
90₪ 391.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.5mm

Transistor Material

Si

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more