Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
47 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
15 nC @ 5 V, 29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
₪ 38.10
₪ 7.62 Each (In a Pack of 5) (ex VAT)
₪ 44.58
₪ 8.915 Each (In a Pack of 5) (inc. VAT)
5
₪ 38.10
₪ 7.62 Each (In a Pack of 5) (ex VAT)
₪ 44.58
₪ 8.915 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 7.62 | ₪ 38.10 |
50 - 95 | ₪ 4.38 | ₪ 21.90 |
100+ | ₪ 3.885 | ₪ 19.42 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
47 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
15 nC @ 5 V, 29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details