Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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₪ 180.75
₪ 3.615 Each (In a Tube of 50) (ex VAT)
₪ 211.48
₪ 4.23 Each (In a Tube of 50) (inc. VAT)
50
₪ 180.75
₪ 3.615 Each (In a Tube of 50) (ex VAT)
₪ 211.48
₪ 4.23 Each (In a Tube of 50) (inc. VAT)
50
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Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products