Toshiba TK N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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₪ 285.00
₪ 5.70 Each (In a Tube of 50) (ex VAT)
₪ 333.45
₪ 6.669 Each (In a Tube of 50) (inc. VAT)
50
₪ 285.00
₪ 5.70 Each (In a Tube of 50) (ex VAT)
₪ 333.45
₪ 6.669 Each (In a Tube of 50) (inc. VAT)
50
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Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products