Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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₪ 28.48
₪ 28.48 Each (ex VAT)
₪ 33.32
₪ 33.32 Each (inc. VAT)
1
₪ 28.48
₪ 28.48 Each (ex VAT)
₪ 33.32
₪ 33.32 Each (inc. VAT)
1
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| quantity | Unit price |
|---|---|
| 1 - 9 | ₪ 28.48 |
| 10 - 19 | ₪ 16.78 |
| 20 - 39 | ₪ 16.58 |
| 40+ | ₪ 16.46 |
Ideate. Create. Collaborate
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Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products