Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
53 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
15.1mm
Series
U-MOSVIII-H
Forward Diode Voltage
1.2V
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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₪ 4.377
Each (In a Pack of 10) (ex VAT)
₪ 5.121
Each (In a Pack of 10) (inc. VAT)
10
₪ 4.377
Each (In a Pack of 10) (ex VAT)
₪ 5.121
Each (In a Pack of 10) (inc. VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | ₪ 4.377 | ₪ 43.77 |
50 - 90 | ₪ 2.685 | ₪ 26.85 |
100 - 240 | ₪ 2.489 | ₪ 24.89 |
250 - 490 | ₪ 2.489 | ₪ 24.89 |
500+ | ₪ 2.461 | ₪ 24.61 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
53 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
15.1mm
Series
U-MOSVIII-H
Forward Diode Voltage
1.2V
Product details