Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S

RS Stock No.: 891-2945Brand: ToshibaManufacturers Part No.: TK20N60W,S1VF(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Forward Diode Voltage

1.7V

Country of Origin

China

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₪ 40.80

₪ 20.40 Each (In a Pack of 2) (ex VAT)

₪ 47.74

₪ 23.868 Each (In a Pack of 2) (inc. VAT)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S

2

Available in multiples of 2
2₪ 40.80
4₪ 81.60
6₪ 122.40
8₪ 163.20
10₪ 182.40
12₪ 218.88
14₪ 255.36
16₪ 291.84
18₪ 328.32
20₪ 364.80
22₪ 401.28
24₪ 437.76
26₪ 474.24
28₪ 510.72
30₪ 547.20

₪ 40.80

₪ 20.40 Each (In a Pack of 2) (ex VAT)

₪ 47.74

₪ 23.868 Each (In a Pack of 2) (inc. VAT)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W,S1VF(S
Stock information temporarily unavailable.

2

Available in multiples of 2
2₪ 40.80
4₪ 81.60
6₪ 122.40
8₪ 163.20
10₪ 182.40
12₪ 218.88
14₪ 255.36
16₪ 291.84
18₪ 328.32
20₪ 364.80
22₪ 401.28
24₪ 437.76
26₪ 474.24
28₪ 510.72
30₪ 547.20

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
2 - 8₪ 20.40₪ 40.80
10 - 38₪ 18.24₪ 36.48
40 - 98₪ 16.185₪ 32.37
100 - 198₪ 15.33₪ 30.66
200+₪ 14.76₪ 29.52

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Forward Diode Voltage

1.7V

Country of Origin

China

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more