Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

RS Stock No.: 125-0551Brand: ToshibaManufacturers Part No.: TK20N60W5,S1VF(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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₪ 124.35

₪ 24.87 Each (In a Pack of 5) (ex VAT)

₪ 145.49

₪ 29.098 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

5

Available in multiples of 5
5₪ 124.35
10₪ 248.70
15₪ 373.05
20₪ 497.40
25₪ 570.00
30₪ 684.00
35₪ 798.00
40₪ 912.00
45₪ 1,026.00
50₪ 1,055.25
55₪ 1,160.78
60₪ 1,266.30
65₪ 1,371.82
70₪ 1,477.35
75₪ 1,582.88

₪ 124.35

₪ 24.87 Each (In a Pack of 5) (ex VAT)

₪ 145.49

₪ 29.098 Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

Stock information temporarily unavailable.

5

Available in multiples of 5
5₪ 124.35
10₪ 248.70
15₪ 373.05
20₪ 497.40
25₪ 570.00
30₪ 684.00
35₪ 798.00
40₪ 912.00
45₪ 1,026.00
50₪ 1,055.25
55₪ 1,160.78
60₪ 1,266.30
65₪ 1,371.82
70₪ 1,477.35
75₪ 1,582.88

Stock information temporarily unavailable.

quantityUnit pricePer Pack
5 - 20₪ 24.87₪ 124.35
25 - 45₪ 22.80₪ 114.00
50+₪ 21.105₪ 105.52

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more