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Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J

RS Stock No.: 144-5200Brand: ToshibaManufacturers Part No.: TK20A25D,S5X(J
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₪ 65.70

₪ 6.57 Each (In a Pack of 10) (ex VAT)

₪ 76.87

₪ 7.687 Each (In a Pack of 10) (inc. VAT)

Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J

10

Available in multiples of 10
10₪ 65.70
20₪ 131.40
30₪ 190.35
40₪ 253.80
50₪ 317.25
60₪ 380.70
70₪ 444.15
80₪ 507.60
90₪ 571.05
100₪ 634.50
110₪ 697.95
120₪ 761.40
130₪ 824.85
140₪ 888.30
150₪ 951.75

₪ 65.70

₪ 6.57 Each (In a Pack of 10) (ex VAT)

₪ 76.87

₪ 7.687 Each (In a Pack of 10) (inc. VAT)

Toshiba N-Channel MOSFET, 20 A, 250 V, 3-Pin TO-220SIS TK20A25D,S5X(J
Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 65.70
20₪ 131.40
30₪ 190.35
40₪ 253.80
50₪ 317.25
60₪ 380.70
70₪ 444.15
80₪ 507.60
90₪ 571.05
100₪ 634.50
110₪ 697.95
120₪ 761.40
130₪ 824.85
140₪ 888.30
150₪ 951.75

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 20₪ 6.57₪ 65.70
30+₪ 6.345₪ 63.45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

250 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.7V

Height

15mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more