Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
₪ 51.08
₪ 10.215 Each (In a Pack of 5) (ex VAT)
₪ 59.76
₪ 11.952 Each (In a Pack of 5) (inc. VAT)
5
₪ 51.08
₪ 10.215 Each (In a Pack of 5) (ex VAT)
₪ 59.76
₪ 11.952 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 10.215 | ₪ 51.08 |
25 - 95 | ₪ 9.12 | ₪ 45.60 |
100 - 245 | ₪ 8.10 | ₪ 40.50 |
250 - 495 | ₪ 7.695 | ₪ 38.48 |
500+ | ₪ 7.35 | ₪ 36.75 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Country of Origin
China
Product details