N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

RS Stock No.: 125-0532Brand: ToshibaManufacturers Part No.: TK10A60W,S4VX(M
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₪ 10.474

Each (In a Pack of 5) (ex VAT)

₪ 12.255

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

5

Available in multiples of 5
5₪ 52.37
10₪ 104.74
15₪ 157.11
20₪ 209.48
25₪ 160.47
30₪ 192.56
35₪ 224.65
40₪ 256.75
45₪ 288.84
50₪ 297.86
55₪ 327.65
60₪ 357.43
65₪ 387.22
70₪ 417.00
75₪ 446.79

₪ 10.474

Each (In a Pack of 5) (ex VAT)

₪ 12.255

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
Stock information temporarily unavailable.

5

Available in multiples of 5
5₪ 52.37
10₪ 104.74
15₪ 157.11
20₪ 209.48
25₪ 160.47
30₪ 192.56
35₪ 224.65
40₪ 256.75
45₪ 288.84
50₪ 297.86
55₪ 327.65
60₪ 357.43
65₪ 387.22
70₪ 417.00
75₪ 446.79

Buy in bulk

quantityUnit pricePer Pack
5 - 20₪ 10.474₪ 52.37
25 - 45₪ 6.419₪ 32.09
50+₪ 5.957₪ 29.79

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Height

15mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more