MOSFET Transistor Toshiba TK100A10N1,S4X(S

RS Stock No.: 827-6094PBrand: ToshibaManufacturers Part No.: TK100A10N1,S4X(S
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Technical documents

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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₪ 29.227

Each (Supplied in a Bag) (ex VAT)

₪ 34.196

Each (Supplied in a Bag) (inc VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2₪ 58.45
4₪ 116.91
6₪ 175.36
8₪ 233.81
10₪ 292.27
12₪ 350.72
14₪ 409.17
16₪ 467.62
18₪ 526.08
20₪ 523.00
22₪ 575.30
24₪ 627.60
26₪ 679.90
28₪ 732.20
30₪ 784.50

₪ 29.227

Each (Supplied in a Bag) (ex VAT)

₪ 34.196

Each (Supplied in a Bag) (inc VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2₪ 58.45
4₪ 116.91
6₪ 175.36
8₪ 233.81
10₪ 292.27
12₪ 350.72
14₪ 409.17
16₪ 467.62
18₪ 526.08
20₪ 523.00
22₪ 575.30
24₪ 627.60
26₪ 679.90
28₪ 732.20
30₪ 784.50

Buy in bulk

quantityUnit pricePer Bag
2 - 18₪ 29.227₪ 58.45
20 - 38₪ 26.15₪ 52.30
40 - 98₪ 23.213₪ 46.43
100 - 498₪ 22.039₪ 44.08
500+₪ 21.102₪ 42.20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more