MOSFET Transistor Toshiba TK100A10N1,S4X(S

RS Stock No.: 827-6094Brand: ToshibaManufacturers Part No.: TK100A10N1,S4X(S
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Technical documents

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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₪ 29.255

Each (In a Pack of 2) (ex VAT)

₪ 34.228

Each (In a Pack of 2) (inc VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2₪ 58.51
4₪ 117.02
6₪ 175.53
8₪ 234.04
10₪ 292.55
12₪ 351.05
14₪ 409.56
16₪ 468.07
18₪ 526.58
20₪ 523.56
22₪ 575.92
24₪ 628.27
26₪ 680.63
28₪ 732.99
30₪ 785.34

₪ 29.255

Each (In a Pack of 2) (ex VAT)

₪ 34.228

Each (In a Pack of 2) (inc VAT)

MOSFET Transistor Toshiba TK100A10N1,S4X(S
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2₪ 58.51
4₪ 117.02
6₪ 175.53
8₪ 234.04
10₪ 292.55
12₪ 351.05
14₪ 409.56
16₪ 468.07
18₪ 526.58
20₪ 523.56
22₪ 575.92
24₪ 628.27
26₪ 680.63
28₪ 732.99
30₪ 785.34

Buy in bulk

quantityUnit pricePer Pack
2 - 18₪ 29.255₪ 58.51
20 - 38₪ 26.178₪ 52.36
40 - 98₪ 23.241₪ 46.48
100 - 498₪ 22.067₪ 44.13
500+₪ 21.13₪ 42.26

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220SIS

Maximum Drain Source Resistance

3,8 mΩ

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

140 nC při 10 V

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more