Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Country of Origin
Thailand
Stock information temporarily unavailable.
Please check again later.
₪ 0.238
Each (On a Reel of 3000) (ex VAT)
₪ 0.278
Each (On a Reel of 3000) (inc VAT)
3000
₪ 0.238
Each (On a Reel of 3000) (ex VAT)
₪ 0.278
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | ₪ 0.238 | ₪ 713.18 |
6000 - 6000 | ₪ 0.238 | ₪ 713.18 |
9000+ | ₪ 0.224 | ₪ 671.23 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Width
1.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Height
0.9mm
Forward Diode Voltage
1.1V
Country of Origin
Thailand