Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
US6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon
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Stock information temporarily unavailable.
P.O.A.
Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Select packaging type
Standard
200
P.O.A.
Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Toshiba SSM6N7002KFU,LF(T
Stock information temporarily unavailable.
Select packaging type
Standard
200
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
US6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon